Theory, Design, and Characterization of Nanoelectromechanical Relays for Stiction-Based Non-Volatile Memory

Switch on, switch off: stiction in nanoelectromechanical switches.

We present a theoretical investigation of stiction in nanoscale electromechanical contact switches. We develop a mathematical model to describe the deflection of a cantilever beam in response to both electrostatic and van der Waals forces. Particular focus is given to the question of whether adhesive van der Waals forces cause the cantilever to remain in the 'ON' state even when the electrostat...

Volatile and Non-Volatile Single Electron Memory

Multi Tunnel Junctions (MTJs) have attracted much attention recently in the fields of Single-Electron Devices (SED) in particular Single-Electron Memory (SEM). In this paper, we have design and study a nano-device structure using a two dimensional array MTJs for Volatile and Non-Volatile-SEM, in order to analyze the impact of physical parameters on the performances. We investigate the single-el...

Chalcogenide-Based Non-Volatile Memory Technology

– Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polycrystalline state that is highly reflective and low in resistance. The application of this commercially proven technology to create dense, high-speed, non-vol...

Non-Volatile Memory Based Cache Replacement Policy

Currently, most computer systems consist of Dynamic RAM (DRAM) as main memory and Hard Disk Drives (HDDs) as storage devices. Due to DRAM’s volatile nature, it suffers from data loss in the event of power failure or system crash. With rapid development of new types of non-volatile memory, it becomes promising that one of these technologies will replace DRAM as main memory in the near future. Co...

Non-volatile memory based on nanostructures.